Effect of Bias Applied to the Substrate on the Low Temperature Growth of Silicon Epitaxial Films during RF-PECVD-Reference-Cited by-同舟云学术

Effect of Bias Applied to the Substrate on the Low Temperature Growth of Silicon Epitaxial Films during RF-PECVD

Published:2018-08-20 Issue:10 Volume:18 Page:5816-5823
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Park Soon-won¹,Jung Jae-soo²,Kim Kun-su¹,Kim Kwang-ho³,Hwang Nong-moon¹⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

2. Samsung Display, 181 Samsung-ro, Tangjeong-myeon, Asan-si, Chungcheongnam-do 31454, Republic of Korea

3. Global Frontier R&D Center for Hybrid Interface Materials, Pusan National University, Busandeahak-ro 63 beon-gil 2, Geumjeong-gu, Busan 46241, Republic of Korea

4. RIAM, Seoul National University,1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b00384

Reference54 articles.

1. Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays

2. Low temperature poly-Si TFT-LCD by excimer laser anneal

3. Photovoltaic Technology: The Case for Thin-Film Solar Cells

4. Fracture toughness of polysilicon MEMS devices

5. Microstructures of low‐temperature‐deposited polycrystalline silicon with micrometer grains

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