Crystal-state–amorphous-state transition in low-temperature silicon homoepitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.8483/fulltext
Reference13 articles.
1. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
2. Low‐temperature homoepitaxy on Si(111)
3. Breakdown of crystallinity in low‐temperature‐grown GaAs layers
4. Enhancement of low‐temperature critical epitaxial thickness of Si(100) with ion beam sputtering
5. Ion beam deposited epitaxial thin silicon films
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