Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1957109
Reference21 articles.
1. High hole mobility in SiGe alloys for device applications
2. Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices
3. Special mechanisms in thin-film SOI MOSFETs
4. Oxidation-induced traps near SiO2/SiGe interface
5. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer;Materials Research Express;2019-05-24
2. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition;Nanoscale Research Letters;2017-05-25
3. Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium;Microelectronics International;2017-05-02
4. Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01
5. Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing;Solid-State Electronics;2011-06
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