Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379981
Reference20 articles.
1. Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
2. 1.3 μm room-temperature GaAs-based quantum-dot laser
3. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
4. Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition
5. Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition
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