Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition

Published:2001-01 Issue:1 Volume:35 Page:93-98
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zvonkov B. N.,Karpovich I. A.,Baidus’ N. V.,Filatov D. O.,Morozov S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1340297.pdf

Reference8 articles.

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2. N. V. Baidus’, B. N. Zvonkov, D. O. Filatov, et al., in Proceedings of the All-Russia Conference “Microprobe Microscopy-99,” Nizhni Novgorod, 1999, p. 164; Poverkhnost’ (in press).

3. B. N. Zvonkov, I. G. Malkina, E. R. Lin’kova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1100 (1997) [Semiconductors 31, 941 (1997)].

4. H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 73, 2742 (1998).

5. B. V. Volovik, A. F. Tsatsul’nikov, D. A. Bedarev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 990 (1999) [Semiconductors 33, 901 (1999)].

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