Characterization of near-surface traps in semiconductors: GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379982
Reference14 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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4. Convenient determination of concentration and energy in deep‐level transient spectroscopy
5. Effects of proton implantation on electrical and recombination properties of n-GaN
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