Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation-Reference-Cited by-同舟云学术

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Published:2019-01-21 Issue:3 Volume:125 Page:035702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ferrandis Philippe¹²^ORCID,El-Khatib Mariam³,Jaud Marie-Anne²,Morvan Erwan²^ORCID,Charles Matthew²,Guillot Gérard³,Bremond Georges³

Affiliation:

1. Université de Toulon, Aix Marseille Univ., CNRS, IM2NP, Toulon, France

2. Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France

3. Univ. de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR 5270, INSA de Lyon, Bât. Blaise Pascal, 7 avenue Jean Capelle, F-69621 Villeurbanne Cedex, France

Funder

ARC4

Investissements d'avenir IRT Nanoelec

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5055926

Reference28 articles.

1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

2. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

3. 900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

5. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

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