Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy-Reference-Cited by-同舟云学术

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

Published:2020-08-03 Issue:5 Volume:117 Page:051601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Yang¹²,Zang Hang¹²,Jiang Ke¹²,Ben Jianwei¹³,Zhang Shanli¹²,Shi Zhiming¹²,Jia Yuping¹²,Lü Wei¹⁴^ORCID,Sun Xiaojuan¹²^ORCID,Li Dabing¹²^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China

4. Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun 130012, China

Funder

Suzhou Institute of Nano-Tech and Nano-Bionics

National Key R&D Program of China

The Open Project of State Key Laboratory of Luminescence and Applications

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Department of Science and Technology of Jilin Province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0016054

Reference37 articles.

1. Characterization of near-surface traps in semiconductors: GaN

2. Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates

3. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

4. A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

5. GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates

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