Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2963703
Reference23 articles.
1. Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures
2. Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications
3. Using As/P exchange processes to modify InAs/InP quantum dots
4. Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
5. Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing
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2. Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy;Journal of Crystal Growth;2017-11
3. Laser field induced optical gain in a group III-V quantum wire;The European Physical Journal D;2016-08
4. Phonon effects on interband optical transitions in InAs 0.8 P 0.2 /InP quantum wire;Journal of Luminescence;2016-01
5. Quantum wire with parallelogram cross section: optical properties;Journal of Theoretical and Applied Physics;2012
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