Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy-Reference-Cited by-同舟云学术

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Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy

Published:2017-11 Issue: Volume:477 Page:212-216
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Espinosa-Vega L.I.,Eugenio-Lopez E.,Gutierrez-Hernandez J.M.,Gorbatchev A. Yu.,Shimomura S.,Mendez-Garcia Victor H.

Funder

CONACYT-Mexico

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate;Liu;Nat. Photonics,2011

2. III-V quantum light source and cavity-QED on silicon;Luxmoore;Sci. Rep.,2013

3. Electronic coupling in nanoscale InAs/GaAs quantum dot pairs separated by a thin Ga(Al)As spacer;Liu;Nanoscale Res. Lett.,2015

4. Thermodynamic theory of growth of nanostructures;Li;Prog. Mater Sci.,2014

5. Confined Phonons in Si Nanowires

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3. Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination;Materials;2021-01-19

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