Influence of GaAs crystal anisotropy on deformation behavior and residual stress distribution of nanoscratching
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-021-04833-x.pdf
Reference44 articles.
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3. A. Ghalgaoui, K. Reimann, M. Woerner, T. Elsaesser, C. Flytzanis, K. Biermann, Resonant second-order nonlinear terahertz response of gallium arsenide. Phys. Rev. Lett. (2018). https://doi.org/10.1103/PhysRevLett.121.266602
4. L. Hu, Y. Wang, M. Xu, Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered mode. Electron. Lett. (2019). https://doi.org/10.1049/el.2019.0601
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