Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low‐energy‐triggered mode-Reference-Cited by-同舟云学术

Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low‐energy‐triggered mode

Published:2019-06 Issue:12 Volume:55 Page:711-712
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Hu Long¹^ORCID,Wang Yaogong¹,Xu Ming²

Affiliation:

1. Key Laboratory for Physical Electronics and DevicesMinistry of EducationXi'an Jiaotong UniversityXi'an710049People's Republic of China

2. Department of Applied PhysicsXi'an University of TechnologyXi'an710048People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.0601

Reference8 articles.

1. 6‐kV, 130‐ps rise‐time pulsed‐power circuit featuring cascaded compression by fast recovery and avalanche diodes

2. Mar A. Zutavern F.J. Hjalmarson H.P.et. al. : ‘Advanced high‐longevity GaAs photoconductive semiconductor switches’. Tech. Rep. SAND2015‐3597C Sandia Nat. Lab. Albuquerque NM USA 2015

3. A low‐energy‐triggered bulk gallium arsenide avalanche semiconductor switch with delayed breakdown;Hu L.;Electron Device Lett.,2015

4. High‐power microwave generation with photoconductors;Zucker O.S.F.;J. Lightwave Technol.,2008

5. Triggering GaAs lock‐on switches with laser diode arrays;Loubriel G.M.;Trans. Electron Devices,1991

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