Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372269
Reference32 articles.
1. Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
2. Silicon heterointerface photodetector
3. Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding
4. Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients
5. Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions;Journal of The Electrochemical Society;2009
2. Interfacial Chemistry of InP/GaAs Bonded Pairs;Journal of Electronic Materials;2007-03-30
3. Ultra-high vacuum direct bonding of a p–n junction GaAs wafer using low-energy hydrogen ion beam surface cleaning;Vacuum;2007-03
4. Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells;Semiconductor Science and Technology;2005-04-27
5. Observations of interfaces in direct wafer-bonded InP–GaAs structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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