Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling-Reference-Cited by-同舟云学术

Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling

Published:2017-07-07 Issue:1 Volume:122 Page:014502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Jain Prateek¹,Rastogi Priyank¹,Yadav Chandan¹,Agarwal Amit²^ORCID,Chauhan Yogesh Singh¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India

2. Department of Physics, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference41 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations

3. M. Zhu , S. S. Tan et al., “ Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current,” U.S. patent 12,587,511 (June 14 2011).

4. Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure

5. J. Knoch , in International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) (2009), pp. 45–46.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter;Nanoelectronic Devices and Applications;2024-06-26

2. Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source TFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-03-15

3. A FinBOX Based Ge FinEHBTFET: Design and Investigation;Silicon;2021-03-02

4. Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD;Journal of Physics: Conference Series;2020-11-01

5. Design of Extended Channel Ge-source TFET for Low Power Applications;International Journal of Integrated Engineering;2020-08-31