A FinBOX Based Ge FinEHBTFET: Design and Investigation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-01006-6.pdf
Reference34 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance;Japanese Journal of Applied Physics;2024-06-03
2. Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation;Physica Scripta;2023-08-09
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