An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Abstract

Abstract This paper proposes a fin electron-hole bilayer tunneling FET with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source–drain direct tunneling, significantly reducing the off-state current (I off). P-type Gaussian doping can not only solve the problem of the inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SS avg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain I off of 2.37 × 10−16 A μm−1, SS avg of 17.97 mV dec−1, a cutoff frequency (f T) of 13.2 GHz, and a gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in I off by four orders of magnitude, a decrease in SS avg by 65.27%, and an increase in f T and GBW by 78.59% and 93.62%, respectively.