Structural model of sulfur on GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356203
Reference16 articles.
1. Effects of H2S adsorption on surface properties of GaAs {100} grown in situ by MBE
2. Surface passivation of GaAs
3. Surface passivation of GaAs with P2S5‐containing solutions
4. A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes
5. Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single‐source precursor
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