A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345555
Reference10 articles.
1. Effect of native oxide on the interface property of GaAs MIS structures
2. Unpinned (100) GaAs surfaces in air using photochemistry
3. Reduction of GaAs surface recombination velocity by chemical treatment
4. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
5. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
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