P2S5/(NH4)2S<italic>x</italic>-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs-Reference-Cited by-同舟云学术

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P₂S₅/(NH₄)₂S_x-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

Published:2014-08 Issue:8 Volume:61 Page:2767-2773
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Subramanian Sujith,Kong Eugene Y.-J.,Li Daosheng,Wicaksono Satrio,Yoon Soon Fatt,Yeo Yee-Chia

Funder

National Research Foundation, Singapore

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6861490/06842589.pdf?arnumber=6842589

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs Semiconductor Passivated by (NH4)2Sx: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements;Semiconductors;2020-06-30

2. Understanding Thermal Evolution and Monolayer Doping of Sulfur-Passivated GaAs(100);The Journal of Physical Chemistry C;2018-03-28

3. Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers;ACS Omega;2017-05-01

4. Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal;Solid-State Electronics;2016-01

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