Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd‐W and Pt‐W alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91713
Reference5 articles.
1. Contact reaction between Si and Pd‐W alloy films
2. Reverse current-voltage characteristics of metal-silicide Schottky diodes
3. Microstructure and Schottky barrier height of iridium silicides formed on silicon
4. Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts
5. Formation of NiSi and current transport across the NiSi-Si interface
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1. Nucleation and growth of epitaxial silicide in silicon nanowires;Materials Science and Engineering: R: Reports;2010-11
2. Interaction between Ni90Ti10 alloy thin film and Si single crystal;Journal of Applied Physics;1996
3. Mechanism of ternary silicide formation in a Ti-W-Si system;Applied Surface Science;1993-06
4. Formation of Bilayer Shallow MoSi2/CoSi2Salicide Contact Using W/Co-Mo Alloy Metallization;Japanese Journal of Applied Physics;1992-04-15
5. Interactions between binary metallic alloys and Si, GeSi and GaAs;Materials Science Reports;1992-01
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