Nucleation and growth of epitaxial silicide in silicon nanowires
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference139 articles.
1. Thin Films—Interdiffusions and Reactions;Tu,1978
2. Electrical and optical properties of silicide single crystals and thin films
3. Silicides for VLSI Applications;Murarka,1983
4. Low Schottky barrier of rare‐earth silicide onn‐Si
5. Interfacial Reaction and Schottky Barrier in Metal-Silicon Systems
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