Interface Stability-Controlled Growth of FexGe on Ge (100), (110), and (111) Substrates

Author:

Wu Wen-Ya1ORCID,Gao Junfeng2ORCID,Teo Siew Lang1,Tjiu Weng Weei1,Guo Shi Feng3ORCID,Chi Dongzhi1ORCID,Zhu Qiang1ORCID,Lin Ming1ORCID

Affiliation:

1. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634, Singapore

2. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, P. R. China

3. Shenzhen Key Laboratory of Smart Sensing and Intelligent Systems, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China

Funder

Agency for Science, Technology and Research

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Liaoning Province

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Time-Resolved Dynamic Crystallization at Liquid/Vapor Interface;The Journal of Physical Chemistry C;2022-11-10

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