Breakdown mechanism in buried silicon oxide films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354458
Reference26 articles.
1. Dielectric breakdown induced by sodium in MOS structures
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3. Sodium-Induced Barrier-Height Lowering and Dielectric Breakdown on SiO[sub 2] Films on Silicon
4. Conductivity-type conversion in multiple-implant/multiple-anneal SOI
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1. Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide;Semiconductors;2018-08-22
2. Silicon Oxide: A Non-innocent Surface for Molecular Electronics and Nanoelectronics Studies;Journal of the American Chemical Society;2010-12-22
3. Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields;Semiconductors;2002-07
4. Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures;Progress in SOI Structures and Devices Operating at Extreme Conditions;2002
5. Radio frequency plasma annealing of positive charge generated by Fowler–Nordheim electron injection in buried oxides in silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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