Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide-Reference-Cited by-同舟云学术

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Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

Published:2018-08-22 Issue:9 Volume:52 Page:1114-1117
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shiryaev A. A.,Vorotyntsev V. M.,Shobolov E. L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782618090166.pdf

Reference30 articles.

1. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).

2. A. L. Aseev, V. P. Popov, V. P. Volodin, and V. N. Maryutin, Nano-Mikrosist. Tekh. 9, 23 (2002).

3. A. Yu. Nikiforov, V. A. Telets, and A. I. Chumakov, Radiation Effects in CMOS IC (Radio Svyaz’, Moscow, 1994) [in Russian].

4. I. B. Yashanin, G. G. Davydov, A. Yu. Nikiforov, and Yu. M. Moskovskaya, Izv. Vyssh. Uchebn. Zaved., Elektron., No. 5 (97), 11 (2012).

5. T. Ouisse, S. Cristoloveanu, and G. Borel, IEEE Electron Dev. Lett. 12, 312 (1991).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic Properties of Bismuth Pyrostannate Doped with 3D Ions;Inorganic Materials: Applied Research;2020-07

2. Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect;Semiconductors;2020-05

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