Reflection high‐energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111528
Reference10 articles.
1. Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE
2. Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy
3. Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films
4. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
5. Direct synthesis of semiconductor quantum wires by molecular-beam epitaxy on (311) surfaces
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