Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices-Reference-Cited by-同舟云学术

Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices

Published:2022-11-15 Issue:11 Volume:5 Page:17033-17041
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Sadeghi Ida¹^ORCID,Pofelski Alexandre²^ORCID,Farkhondeh Hanieh³^ORCID,Fernández-Delgado Natalia²^ORCID,Tam Man Chun¹^ORCID,Leung Kam T.³^ORCID,Botton Gianluigi A.²^ORCID,Wasilewski Zbigniew R.¹⁴^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, OntarioN2L3G1, Canada

2. Department of Materials Science and Engineering, McMaster University, Hamilton, OntarioL8S 4L8, Canada

3. Department of Chemistry, University of Waterloo, Waterloo, OntarioN2L3G1, Canada

4. Department of Physics and Astronomy, Waterloo Institute for Nanotechnology (WIN), Institute for Quantum Computing (IQC), University of Waterloo, Waterloo, OntarioN2L 3G1, Canada

Funder

Ontario Centres of Excellence

Waterloo Institute for Nanotechnology, University of Waterloo

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c03950

Reference49 articles.

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2. The homoepitaxial growth of GaAs(111)A and (111)B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity transitions

3. ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’

4. Homoepitaxial growth of InP on (111)B substrates by gas‐source molecular beam epitaxy

5. Reflection high‐energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A