Homoepitaxial growth of InP on (111)B substrates by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108990
Reference17 articles.
1. Optical properties of strained-layer superlattices with growth axis along [111]
2. Optical properties of strained-layer superlattices with growth axis along [111]
3. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
4. Migration‐enhanced epitaxy on a (111)Boriented GaAs substrate
5. Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
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1. Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices;ACS Applied Nano Materials;2022-11-15
2. InAs(111)A homoepitaxy with molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-11
3. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05
4. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
5. Molecular Beam Epitaxial Growth and Characterization of GaAs1-ySbyLayers on (111)B InP Substrates;Japanese Journal of Applied Physics;2002-02-28
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