‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348699
Reference12 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Strain-generated electric fields in [111] growth axis strained-layer superlattices
3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
4. Growth of InxGa1−xAs on patterned GaAs(100) substrates
5. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
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3. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08
4. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05
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