Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays-Reference-Cited by-同舟云学术

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Published:2023-10-27 Issue:12 Volume:23 Page:8670-8677
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Nordstrom Madison D.¹,Garrett Trent A.¹,Reddy Pooja²,McElearney John³,Rushing James R.³,Vallejo Kevin D.⁴^ORCID,Mukherjee Kunal²^ORCID,Grossklaus Kevin A.³,Vandervelde Thomas E.³,Simmonds Paul J.¹³⁵^ORCID

Affiliation:

1. Micron School of Materials Science and Engineering, Boise State University, Boise, Idaho 83725, United States

2. Materials Science and Engineering, Stanford University, Stanford, California 93405, United States

3. Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155, United States

4. Condensed Matter and Materials Physics, Idaho National Laboratory, Idaho Falls, Idaho 83415, United States

5. Department of Physics, Boise State University, Boise, Idaho 83725, United States

Funder

Idaho Operations Office, U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00812

Reference52 articles.

1. Growth mechanisms of highly mismatched AlSb on a Si substrate

2. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

3. Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction

4. Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

5. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

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2. Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers;Japanese Journal of Applied Physics;2024-02-08