Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
2. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
3. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
4. Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes
5. Record of Alloy Semiconductor Physics and Electronics Symp.;Shigeta,1990
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