Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
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4. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
5. A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics
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1. High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates;IEICE Electronics Express;2004
2. Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
3. Relationship between silicon incorporation and electrical characteristics for lateral p - n junctions grown on patterned (110) and (100) GaAs substrates;Semiconductor Science and Technology;1997-12-01
4. Fabrication of quantum wires in thermally etched V-grooves by molecular beam epitaxy;Semiconductor Science and Technology;1997-08-01
5. Investigation of Si as an n-type dopant in AlGaAs grown by molecular beam epitaxy on high index planes;Semiconductor Science and Technology;1997-05-01
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