Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124987
Reference15 articles.
1. Growth and characterization of strain compensated Si1−x−y epitaxial layers
2. Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
3. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys
4. Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
5. Hole effective masses in relaxed Si1−xCx and Si1−yGey alloys
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1. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs;IEEE Transactions on Nuclear Science;2023-08
2. Quantitative analysis of Si/SiGeC superlattices using atom probe tomography;Ultramicroscopy;2015-12
3. Quantitative investigation of SiGeC layers using atom probe tomography;Ultramicroscopy;2015-03
4. The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography;Semiconductor Science and Technology;2011-11-07
5. Annealed Si∕SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy;AIP Conference Proceedings;2011
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