Hole effective masses in relaxed Si1−xCx and Si1−yGey alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118558
Reference13 articles.
1. Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/
2. Growth and characterization of strain compensated Si1−x−y epitaxial layers
3. Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
4. Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors
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