Energy band structure of strained Si1−xCx alloys on Si (001) substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1502203
Reference32 articles.
1. A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
2. A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz f/sub max/ and 6.7-ps ECL
3. Growth and characterization of strain compensated Si1−x−y epitaxial layers
4. Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
5. Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors
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1. Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current;Materials Science Forum;2015-06
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4. One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs;IEEE Transactions on Electron Devices;2012-01
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