Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363163
Reference17 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Growth and characterization of strain compensated Si1−x−y epitaxial layers
3. Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers
4. Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures
5. Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
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1. Structural Characterization of Si1-xCx Nanolayers Synthesized by C Implantation into SiO2/Si;ECS Transactions;2011-09-15
2. Photoluminescence in SiCGe thin films grown on 6H-SiC;Journal of Luminescence;2010-04
3. Heterostructure SiGe/SiGeC MOSFETs;Series in Material Science and Engineering;2007-01-11
4. Ion beam synthesis of cubic-SiC layer on Si(111) substrate;Journal of Applied Physics;2006-09-15
5. Boron segregation and electrical properties in polycrystalline Si1−x−yGexCy and Si1−yCy alloys;Journal of Applied Physics;2004-04-15
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