Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET
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Published:2015-03-01
Issue:3
Volume:15
Page:2168-2172
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Chen Kuan-Ting,Fan Jun Wei,Chang Shu-Tong,Lin Chung-Yi
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering