Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects-Reference-Cited by-同舟云学术

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Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects

Published:2008-08-13 Issue:9 Volume:23 Page:095017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mukhopadhyay Bratati,Biswas Abhijit,Basu P K,Eneman G,Verheyen P,Simoen E,Claeys C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Beyond the conventional transistor

2. Extending the road beyond CMOS

3. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

4. Device and circuit performance of SiGe/Si MOSFETs

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4. Subthreshold characteristics analysis and modeling of fully depleted silicon-on-insulator MOSFETs with high-k SiO2 stacked gate structure;Japanese Journal of Applied Physics;2018-07-25

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