The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs-Reference-Cited by-同舟云学术

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

Published:2023-08 Issue:8 Volume:70 Page:1797-1804
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Ildefonso Adrian¹^ORCID,Hales Joel M.²^ORCID,Khachatrian Ani¹^ORCID,Teng Jeffrey W.³^ORCID,Tzintzarov George N.³^ORCID,Nergui Delgermaa³^ORCID,Ringel Brett L.³^ORCID,Raghunathan Uppili⁴,Jain Vibhor⁴,Cressler John D.³^ORCID,McMorrow Dale¹^ORCID

Affiliation:

1. U.S. Research Laboratory, Washington, DC, USA

2. Jacobs Inc., Herndon, VA, USA

3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

4. GlobalFoundries, Essex Junction, VT, USA

Funder

DTRA Radiation Hardened Microelectronics Program

DTRA Basic Research Combating Weapons of Mass Destruction Program

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10064470.pdf?arnumber=10064470

Reference48 articles.

1. Device Architectures for High-speed SiGe HBTs

2. Investigations of new sensor designs and development of an effective radiation damage model for the simulation of highly irradiated silicon particle detectors;eber,2013

3. SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

4. Impact of displacement damage on single event transient charge collection in SiGe HBTs

5. Proton and gamma radiation of 0.13 µm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

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