Impact of displacement damage on single event transient charge collection in SiGe HBTs
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference37 articles.
1. Single event effects in circuit-hardened sige HBT logic at gigabit per second data rates;Marshall;IEEE Trans. Nucl. Sci.,2000
2. Silicon-Germanium Heterojunction Bipolar Transistors;Cressler,2003
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4. The effects of proton irradiation on the lateral and vertical scaling of UHV/cvd sige HBT bicmos technology;Cressler;IEEE Trans. Nucl. Sci.,2000
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