Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation-Reference-Cited by-同舟云学术

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Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

Published:2022-04-14 Issue:5 Volume:65 Page:1193-1205
ISSN:1674-7321
Container-title:Science China Technological Sciences
language:en
Short-container-title:Sci. China Technol. Sci.

Author:

Pan XiaoYu,Guo HongXia,Feng YaHui,Liu YiNong,Zhang JinXin,Li Zhuang,Luo YinHong,Zhang FengQi,Wang Tan,Zhao Wen,Ding LiLi,Xu JingYan

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11431-021-2013-1.pdf

Reference30 articles.

1. Cressler J D. SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications. IEEE Trans Microwave Theor Techn, 1998, 46: 572–589

2. Cressler J D. Radiation effects in SiGe technology. IEEE Trans Nucl Sci, 2013, 60: 1992–2014

3. Cressler J D. On the potential of SiGe HBTs for extreme environment electronics. Proc IEEE, 2005, 93: 1559–1582

4. Marshall P W, Carts M A, Campbell A, et al. Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates. IEEE Trans Nucl Sci, 2000, 47: 2669–2674

5. Lourenco N E, Fleetwood Z E, Ildefonso A, et al. The impact of technology scaling on the single-event transient response of SiGe HBTs. IEEE Trans Nucl Sci, 2017, 64: 406–414

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT;Physica Scripta;2024-04-23

2. The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature;Electronics;2023-01-28

3. Temperature dependence of single event transient in SiGe HBT for cryogenic application;Chinese Physics B;2022-12-09

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