Epitaxial growth of FeSi2in Fe thin films on Si with a thin interposing Ni layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96237
Reference9 articles.
1. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
2. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
3. Epitaxial growth of CrSi2on (111)Si
4. Epitaxial growth of VSi2on (111) Si
5. Interfacial reactions of iron thin films on silicon
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1. Growth of β-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers;Journal of Applied Physics;2001-11
2. Thin Film Silicide Formation;Semiconducting Silicides;2000
3. Study of interdiffusion in thin Fe film deposited on Si(111) by x-ray reflectivity and secondary ion mass spectrometry;Journal of Applied Physics;1999-05-15
4. Influence of the addition of Co and Ni on the formation of epitaxial semiconducting β-FeSi2: Comparison of different evaporation methods;Journal of Applied Physics;1998-04-15
5. Ion beam mixing of Fe thin film and Si substrate;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-09
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