Influence of the addition of Co and Ni on the formation of epitaxial semiconducting β-FeSi2: Comparison of different evaporation methods
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367174
Reference42 articles.
1. Electronic structure of β-FeSi2
2. Semiconducting silicide-silicon heterostructures: growth, properties and applications
3. The optical band gap of semiconducting iron disilicide thin films
4. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
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1. Magnetic ordering of the Fe/Si interface and its initial formation;Journal of Applied Physics;2008-11-15
2. Processes of silicide formation in the Fe/Si(111)7 × 7 system;Physics of the Solid State;2008-08
3. Growth ofβ-FeSi2 single crystals by the chemical vapor transport method;phys. stat. sol. (a);2004-10
4. Structural, electronic, and optical properties ofβ−(Fe1−xCox)Si2;Physical Review B;2004-03-11
5. Study about iron disilicide formation by high current ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-11
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