Epitaxial growth of CrSi2on (111)Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95301
Reference17 articles.
1. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
2. ORIENTED GROWTH OF THE INTERFACIAL PtSi LAYER OR BETWEEN Pt AND Si
3. Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes
4. Lattice imaging of silicide-silicon interfaces
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2. Formation of the Thermoelectric Candidate Chromium Silicide by Use of a Pack-Cementation Process;Journal of Electronic Materials;2014-03-15
3. SYNTHESES OF NANOSTRUCTURE BUNDLES BASED ON SEMICONDUCTING METAL SILICIDES;Functional Materials Letters;2013-10
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