Study of interdiffusion in thin Fe film deposited on Si(111) by x-ray reflectivity and secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370524
Reference25 articles.
1. Transition metal silicides in silicon technology
2. Electronic properties on silicon-transition metal interface compounds
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5. Metallization-induced spontaneous silicide formation at room temperature: The Fe/Si case
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3. Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation;Journal of Applied Physics;2011-01-15
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