Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks-Reference-Cited by-同舟云学术

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Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

Published:2010-05-24 Issue:21 Volume:96 Page:212901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Marchiori C.,Kiewra E.,Fompeyrine J.,Gerl C.,Rossel C.,Richter M.,Locquet J.-P.,Smets T.,Sousa M.,Andersson C.,Webb D. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3430572

Reference18 articles.

1. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

2. The advanced unified defect model for Schottky barrier formation

3. High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation

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1. In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As;Electronic Materials Letters;2015-09

2. Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer;Microelectronic Engineering;2015-04

3. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

4. Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition;ACS Applied Materials & Interfaces;2014-02-21

5. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors;Applied Physics Letters;2012-02-06

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