In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As-Reference-Cited by-同舟云学术

In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Published:2015-09 Issue:5 Volume:11 Page:769-774
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lucero Antonio T.,Byun Young-Chul,Qin Xiaoye,Cheng Lanxia,Kim Hyoungsub,Wallace Robert M.,Kim Jiyoung

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-015-5150-6.pdf

Reference28 articles.

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4. S. Suthram, Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, A. Koehler, T. Acosta, T. Nishida, H. H. Tseng, W. Tsai, J. Lee, R. Jammy, and S. E. Thompson, in VLSI Technology, 182 (2008).

5. P. D. Ye, J. Vac. Sci. Technol. A. 26, 697 (2008).

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