Device performance simulations of multilayer black phosphorus tunneling transistors
Author:
Affiliation:
1. Department of Physics, The University of Hong Kong, Hong Kong, China
2. Department of Physics, McGill University, Montreal H3A 2T8, Canada
Funder
National Natural Science Foundation of China (NSFC)
Natural Sciences and Engineering Research Council of Canada (NSERC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935752
Reference46 articles.
1. Black phosphorus field-effect transistors
2. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
3. Electric field effect in ultrathin black phosphorus
4. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
5. Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
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