Quantum transport of short-gate MOSFETs based on monolayer MoSi<sub>2</sub>N<sub>4</sub>-Reference-Cited by-同舟云学术

Quantum transport of short-gate MOSFETs based on monolayer MoSi₂N₄

Published:2022 Issue:11 Volume:24 Page:6616-6626
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ye Bingjie¹,Jiang Xuecheng¹,Gu Yan¹,Yang Guofeng¹^ORCID,Liu Yushen²^ORCID,Zhao Huiqin¹,Yang Xifeng²,Wei Chunlei³,Zhang Xiumei¹,Lu Naiyan¹

Affiliation:

1. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China

2. School of Electronic and Information Engineering, Suzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu 215556, China

3. Lumisource Technologies Co., Ltd, Wuxi, 214192, China

Abstract

The high carrier mobility, appropriate band gap and good environmental stability of two-dimensional (2D) MoSi2N4 enable it to be an appropriate channel material for transistors with excellent performance.

Funder

National Natural Science Foundation of China

Jiangsu Provincial Key Research and Development Program

Natural Science Foundation of Jiangsu Province

Suzhou University of Science and Technology

Fundamental Research Funds for Central Universities of the Central South University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP00086E