High pulsed current densityβ-Ga2O3MOSFETs verified by an analytical model corrected for interface charge-Reference-Cited by-同舟云学术

High pulsed current densityβ-Ga2O3MOSFETs verified by an analytical model corrected for interface charge

Published:2017-04-03 Issue:14 Volume:110 Page:143505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moser Neil A.,McCandless Jonathan P.^ORCID,Crespo Antonio,Leedy Kevin D.,Green Andrew J.,Heller Eric R.,Chabak Kelson D.,Peixoto Nathalia,Jessen Gregg H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979789

Reference22 articles.

1. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

4. Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

5. On the bulk β-Ga2O3 single crystals grown by the Czochralski method

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