Materials genomics of thin film strain relaxation by misfit dislocations
Author:
Affiliation:
1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
2. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4936364
Reference34 articles.
1. Misfit dislocations in lattice-mismatched epitaxial films
2. Defects in epitaxial multilayers
3. Defects in epitaxial multilayers
4. Defects in epitaxial multilayers
5. Relaxation of strained‐layer semiconductor structures via plastic flow
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2. Distributions of kinetic pathways in strain relaxation of heteroepitaxial films;Journal of Materials Research;2017-10-11
3. Effect of asymmetric strain relaxation on dislocation relaxation processes in heteroepitaxial semiconductors;Journal of Applied Physics;2017-02-21
4. 5 Mismatched Heteroepitaxial Growth and Strain Relaxation;Heteroepitaxy of Semiconductors;2016-09-15
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